The comparison between silicon and germanium

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The comparison between silicon and germanium

Postby John » Tue Dec 03, 2013 8:49 am

can anyone tell me comparison between silicon and germanium?
John Abraham
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Re: The comparison between silicon and germanium

Postby John » Tue Dec 03, 2013 8:52 am

1. Germanium : It is unsuitable for certain application due to high junction leakage currents as it has relatively narrow energy band gap (0.66 eV).
Silicon : It is comparatively suitable for all applications as junction leakage currents are negligible as the energy band gap is comparatively broader (1.1 eV).

2. Germanium : Germanium devices can be operated upto 100°C temperatures.
Silicon : Silicon devices can be operated upto 200°C temperatures.

3. Germanium : Germanium oxides are unsuitable for certain device applications.
Silicon : Silicon dioxides are the most wanted for the planar process

4. Germanium : The intrinsic resistivity without any dopant is 47Ω -cm hence not suitable for high voltage rectifying devices.
Silicon : The intrinsic resistivity without any dopant is 230,000Ω -cm hence most suitable for high voltage rectifying devices as well as infrared sensing devices.

5. Germanium : Germanium is costlier as compared to silicon
Silicon : Silicon is cheaper as compared to germanium.
John Abraham
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Posts: 419
Joined: Wed Jun 05, 2013 9:15 pm


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